| PART |
Description |
Maker |
| KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM62U256CLG-8L KM62U256CLG-10L |
32Kx8 bit Low Power AND Low Vcc CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C- |
32K X 8 STANDARD SRAM, 12 ns, PDSO28
32Kx8 Bit High Speed CMOS Static RAM 32Kx8位高速CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| BS62LV1600ECG70 BS62LV1600ECG55 BS62LV1600FCP55 BS |
Very Low Power CMOS SRAM 2M X 8 bit 极低功耗CMOS SRAMx 8
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PBGA48
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PDSO44
|
BRILLIANCE SEMICONDUCTOR INC
BRILLIANCE SEMICONDUCTOR, Inc.
Brilliance Semiconducto...
|
| 27LV256-20IL 27LV256-20IP 27LV256-20SO 27LV256 27L |
256K (32Kx8) low-voltage CMOS EPROM
256K (32K x 8) Low-Voltage CMOS EPROM 256K2K的8）低电压的CMOS存储
256K (32K x 8) Low-Voltage CMOS EPROM(3.0~5.5V,256K浣?CMOS EPROM)
|
MICROCHIP[Microchip Technology]
Microchip Technology Inc.
Microchip Technology, Inc.
|
| ES62UL256-45TC ES62UL256 ES62UL256-25SC ES62UL256- |
REED RELAY 32Kx8位超低功耗异步静态RAM
Dry Reed Relay; Relay Terminals:Thru Hole 32Kx8位超低功耗异步静态RAM
32Kx8 Bit Ultra-Low Power Asynchronous Static RAM
|
Electronic Theatre Controls, Inc.
NanoAmp Solutions, Inc.
ETC[ETC]
|
| TMP87C409BN TMP87C409BM 87C809 TMP87C809BN TMP87C8 |
(TMP87Cx09xx) CMOS 8-bit Microcontroller
Low Voltage, Low Power, 16-/24-Bit, Dual Sigma Delta ADC; Package: EVALUATION BOARDS; No of Pins: -; Temperature Range: TBD
|
Toshiba Semiconductor
Toshiba Corporation
|
| BS62LV8005 BS62LV8005BC BS62LV8005BI BS62LV8005EC |
DDR-II, 25-Bit 1:1 or 14-Bit 1:2 Configurable Registered Buffer
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| GM76C256CLLT-70NBSP |
IC,SRAM,32KX8,CMOS,TSSOP,28PIN,PLASTIC
|
Hynix Semiconductor
|
| CAT24WC256 |
IC,SERIAL EEPROM,32KX8,CMOS,DIP,8PIN,PLASTIC
|
Catalyst
|
